Power Electronics 5

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Electrical Engineering MCQ Question Papers: Campus Placement

Subject: Power Electronics 5

Part 5: List for questions and answers of Power Electronics


Q1. Maximum di/dt in a SCR is?

a) directly proportional to Vm of supply voltage

b) inversely proportional to Vm of supply voltage

c) inversely proportional to L in the circuit

d) both A and C


Q2. Anode current in an SCR consists of?

a) holes only

b) electrons only

c) either electron or holes

d) Both electron and holes


Q3. Dynamic equalising circuit is useful?

a) to limit di/dt of SCR

b) to limit dV/dt of SCR

c) for voltage equalisation

d) both B and C


Q4. Which following is a two terminal three layer device?

a) BJT

b) Power dioed


d) None of above


Q5. Which of following is not a power transistor?

a) IGBTs





Q6. Which of following is normally ON device?

a) SIT

b) BJT


d) IGBT 


Q7. Power transistor is type of?

a) BJTs


c) IGBTs

d) All of above


Q8. Which of the following is true?

a) SIT is a high power, high frequency device

b) SIT is a high power, low frequency device

c) SIT is a high power, high voltage device

d) SIT is a low power, high frequency device


Q9. A GTO can be turned on by applying?

a) Positive gate signal

b) Positive drain signal

c) Positive source signal

d) None of these


Q10. SITH is also known as?

a) Filled controlled diode

b) Filled controlled rectifier

c) Silicon controlled rectifier

d) None of these


Q11. A power MOSFET has three terminals called?

a) Collector, emitter and gate

b) Drain, source and gate

c) Drain, source and base

d) Collector, emitter and base


Q12. A modern power semiconductor device that combines the characteristic of BJT and MOSFET is?


b) FCT

c) MCT

d) GTO 


Q13. Which one is most suitable power device for high frequency (>100 KHz) switching application?

a) BJT

b) Power MOSFET

c) Schottky diode

d) Microwave transistor


Q14. Thermal voltage VT can be given by?

a) Kq/T

b) KT/q

c) qT/K

d) (K2/q)(T+1/T-1)


Q15. IGBT combines the advantages of?

a) BJTs and SITs

b) BJTs and MOSFETs

c) SITs and MOSFETs

d) None of these


Q16. COOLMOS device can be used in application up to power range of?

a) 1 KVA

b) 2 KVA

c) 500 VA

d) 100 KVA


Q17. Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability?


b) Semi conductor diodes


d) Thyristor


Q18. A thyristor can termed as?

a) AC switch

b) DC switch

c) Both a and B

d) Square wave switch 


Q19. Thyristor is nothing but a?

a) Controlled transistor

b) Controlled switch

c) Amplifier with higher gain

d) Amplifier with large current gain


Q20. BCT is used for?

a) High power phase control

b) High power current control

c) Low power current control

d) Low power phase control 


Part 5: List for questions and answers of Power Electronics


Q1. Answer: a


Q2. Answer: a


Q3. Answer: d


Q4. Answer: b


Q5. Answer: c


Q6. Answer: a


Q7. Answer: d


Q8. Answer: a


Q9. Answer: a


Q10. Answer: a


Q11. Answer: b


Q12. Answer: a


Q13. Answer: b


Q14. Answer: a


Q15. Answer: b


Q16. Answer: b


Q17. Answer: d


Q18. Answer: b


Q19. Answer: b


Q20. Answer: a